Abstract
Abstract In this study, a comprehensive quantitative analysis of the photodiode (PD) is conducted and photovoltaic (PV) characteristics of organic non‐fullerene PCE10:ITIC‐4F devices before and after exposure to a 150 ns pulse of 170 keV proton irradiation with the fluence of 2·1012 p cm−2 that is equivalent to ≈6 years of operation at a low Earth orbit. While an expected initial performance reduction happened in the photodiode and photovoltaic operation modes, a hitherto unknown self‐healing effect in the organic devices is observed several days after the proton irradiation. The organic bulk‐heterojunction (BHJ) material properties and the multi‐mechanisms recombination processes before and after irradiation and during self‐healing are investigated. This analysis provides a quantitative understanding of the changes occurring in the device physics and points toward the relevant aspects of the self‐healing mechanism related to the dynamics of proton‐induced traps in the bulk of the organic active layer. Ultimately, the synergy of record lightweight features and newly discovered self‐healing of proton‐induced damage in organic PDs and solar cells highlights their great potential for applications in rapidly emerging space technology.