On the uniform composition of InxGa1-xSb (x=0.20) bulk crystals for special optoelectronic devices

Stefan A. Manea, Ion I. Munteanu, Cristiana E. Grigorescu, Michaela F. Logofatu, Mihail F. Lazarescu

1996

Closed access Metadata (CSL-JSON)
DOI 10.1117/1.600633
Data confidence 70 medium
How this score is calculated

It is built from checkable properties of the record itself: whether the article has a DOI, how many independent sources confirmed its data, whether the required fields are filled in, and how recent the latest confirmation is. Disagreement between sources and a missing identifier lower it. A value of 80 or above means the record was published without further checking; 60 to 79 means it is published at reduced confidence, with a manual check advisable. A record verified by an editor by hand is never pushed below 90 by a recalculation. This scores our data about the article, not the article itself.

Abstract

Polycrystalline p-type InxGa1-xSb (x=50.20) for optoelectronic devices has been obtained by rapid direct synthesis from highpurity (99.9999%) In, Ga, and Sb. The uniformity of the composition has been checked by neutron activation analysis and also by x-ray diffractometry (Vegard-law approximation). From Hall-effect measurements an acceptor concentration of 3.2x1017 cm-23 and a mobility of 628 cm2/V s for holes, at liquid nitrogen temperature, have been determined, and from absorption measurements, a quite diffuse edge for the optical absorption coefficient resulted. This paper describes the method of rapid direct synthesis of the ternary compound and the techniques used for the characterization of this material for special optoelectronic applications.