A Low-Noise Image Sensor Readout Circuit With Internal Timing Generator

Trong‐Hieu Ngo, Ikechi Augustine Ukaegbu, Min-Gug Kim, Hyo‐Hoon Park

2018

DOI 10.1109/lsens.2018.2875444

Data confidence 70 medium

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Abstract

We describe the design, development, and performance of a complementary metal-oxide semiconductor (CMOS) image sensor read-out circuit. Designed in a 0.35-μm CMOS technology and occupying an area of 2.3 × 13.6 mm2, the proposed multipixel image sensor readout integrated circuit with internal timing generator achieves high performance with 188.7-μV root mean square (RMS) of ultralow output noise, wide linear dynamic range of 2.3 V, low power consumption of 42 mA, and a simple timing scheme. The approaches to boost linear dynamic range are presented. The image sensor also provides the trigger signal for data acquisition purpose.