Development and optimization of the production technology of large-size position-sensitive detectors

Ramizulla A. Muminov, Sali Ashirovich Radzhapov, Yo. K. Toshmuradov, Sh. Risalieva, S. Bekbaev, A. N. Kurmantaev

2014

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DOI 10.1134/s0020441214040083
Data confidence 70 medium
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Abstract

Results of development and optimization of the production technology of large-size semiconductor position-sensitive X-ray detectors, based on Si(Li)- p - i - n structures and intended for tomographic and environmental problems, are described. The detectors with a 50 × 50 × 2-mm-size sensitive area with 8, 16, and 32 strips were produced. With a voltage of 100–500 V, the energy resolution is 50 and 75–80 keV for electrons with an energy of 1 MeV and for α particles with an energy of 7.65 MeV, respectively, when the dark current is 0.5–1 μA, the capacitance value is 300 pF, and noise is 40 keV.