Abstract
The paper presents results of a study of photo-electrophysical characteristics in a solid film and nanowires of cobalt phthalocyanine (CoPc).A solid CoPc film on a substrate with a conductive surface ITO (indium tin oxide) was obtained by thermal evaporation in vacuum.CoPc nanowires were obtained by the temperature gradient physical vapor deposition (TG-PVD).Measurements of current-voltage characteristics were carried out using a potentiostat-galvanostat P20X in the linear sweep mode.The study of transport kinetics and carrier recombination was carried out on the impedance meter P45X.A xenon lamp with radiation intensity equal to 100 mW/cm 2 was used as a solar light simulator.