Abstract
In this study, we report the fabrication and characterization of broadband photodetectors based on carbon nanowalls (CNWs) synthesized by inductively coupled plasma-enhanced chemical vapor deposition (ICP-PECVD). Vertically oriented CNWs with a highly developed edge structure were transferred onto n-type silicon substrates to form CNWs/n-Si heterojunctions. The devices exhibited clear rectifying behavior and strong photoresponse under white light illumination. Spectral analysis revealed a wide detection range from 300 to 1150 nm, with a maximum responsivity of 0.2 A W − 1 and a specific detectivity of 3 × 10 11 Jones. The CNWs/n-Si photodetectors demonstrated low noise equivalent power (NEP) values lie within the range of ~ 10 − 12 –10 − 13 W Hz − 1/2 , a fast temporal response ( t rise / t fall = 17/8 µs), and a cutoff frequency of 53 kHz, confirming their suitability for broad ranges of optoelectronic applications.