Intense Pulsed Light Annealing of Tin(IV) Oxide Electron‐Transport Layer for Large‐Scale Fabrication of Flexible Printed Perovskite Solar Cells

Adilet T. Muratov, Mussakhan A. Aryslan, Yerassyl Yerlanuly, Almaz R. Beisenbayev, Erik O. Shalenov, Ayazhan Kubasheva, Tri Thanh Pham, Annie Ng, Askhat N. Jumabekov

Advanced Photonics Research, 2026

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DOI 10.1002/adpr.202500283
Data confidence 85 high
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Abstract

Intense pulsed light (IPL) annealing is a rapid heat treatment technique that significantly reduces the fabrication time of flexible printed perovskite solar cells (FPPSCs) and is compatible with roll‐to‐roll (R2R) systems. This work presents the results of the optimization of IPL annealing for the tin(IV) oxide (SnO 2 ) electron‐transport layer (ETL) and systematically compares IPL‐annealed samples with their hot plate‐annealed counterparts, designated as REF‐SnO 2 . Thin‐film characterization reveals that the optimal condition, referred to as IPL‐SnO 2 , involves a two‐step annealing process: hot plate drying at 100°C for 5 min followed by a single flash with a pulse voltage of 2400 V and a pulse duration of 1000 μs. Notably, IPL‐SnO 2 and REF‐SnO 2 films exhibit nearly identical electrical, optical, and morphological properties. Moreover, devices fabricated with IPL‐SnO 2 and REF‐SnO 2 ETLs demonstrate comparable photovoltaic performance, reaching average power conversion efficiencies (PCEs) of 8.92% and 8.94%, respectively. Photostability tests show that IPL‐SnO 2 devices are operational after 4500 min of continuous illumination. To distinguish the immediate effect of IPL annealing from that of preannealing, characterizations are conducted in parallel on nonannealed and preannealed samples, termed WA‐SnO 2 and PRE‐SnO 2 , respectively. These findings confirm that IPL annealing is a promising approach for scaling up FPPSCs.