Abstract
The optical and vibrational responses of Gd3Ga5O12 (GGG) single crystals to 147 MeV Kr-ion irradiations were systematically investigated to clarify defect formation pathways and their influence on luminescence mechanisms. Absorption spectra measured at room temperature reveal a stepwise redshift of the fundamental edge and the progressive development of a broad sub-band-gap tail between 4.4 and 5.3 eV, indicating the accumulation of F- and F+-type oxygen-vacancy centers and increasing structural disorder. Raman spectroscopy shows that, despite substantial track overlap at fluences up to 1014 ions/cm2, the crystal preserves its phonon frequencies and linewidths, while peak intensities decrease due to a growing disordered volume fraction. Low-temperature (13 K) photoluminescence demonstrates the persistence of a dominant broad band near 2.4 eV and the emergence of an additional irradiation-induced band at ~2.75 eV whose width increases with fluence, reflecting the formation of vacancy-related defect complexes. Excitation spectra transform from band-edge-dominated behavior in the pristine crystal to defect-tail-mediated excitation in heavily irradiated samples. These results provide a consistent spectroscopic picture of ion-track-induced disorder in GGG and identify the defect states governing its luminescence under extreme irradiation conditions.