Abstract
The effect of directed modification of nanostructures was studied using C 2+ and O 2+ ion beams. The use of ion beams with fluences of 1–5 · 10 11 ion/cm 2 leads to an improvement in structural properties, due to the reduction of distortions and stresses in the structure. It has been established that an increase in the irradiation fluence above 5 · 10 11 ions cm −2 , characteristic of the occurrence of overlapping regions of cascade defects, leads to a decrease in the degree of perfection due to the formation of impurity inclusions in the structure. The change in the conductive properties is due to a decrease in the concentration of regions of disorder and an increase in the degree of perfection of the crystal structure as a result of the radiation annealing of defects and stresses arising during the synthesis process. In this case, the formation of impurity inclusions in the structure (the oxide phase of Cu 2 O and the amorphous phase of Cu 2 C) leads to a decrease in the value of the specific conductivity and an increase in the resistance of nanotubes.