Design of circuits of multilevel inverter on IGBT transistors with pulse-amplitude control

2017

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DOI 10.1117/12.2280466
Data confidence 70 medium
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Abstract

This article considers the design of circuits of multilevel inverter on IGBT transistors with pulse-amplitude control. The output of multilevel inverter on IGBT transistors can produce voltage, which is close to the sinusoidal form. The main task of this multilevel inverter is the conversion of solar energy into electric power of industrial frequency. There has been carried out the analysis of the obtained output curves of the voltage for sinusoidal behavior. This scientific article describes the developed scheme of the multilevel inverter, which allows to obtain at the output the voltage, close to the sinusoidal voltage, and also the regulation of level of the output voltage. In multilevel inverters on IGBT transistors with pulse-amplitude modulation, the formation of the multilevel voltage, approximating a sinusoid, is realized by summing the voltages of power supplies. The best option is considered when the multilevel voltage is applied to the input of the inverter and the sinusoidal voltage is formed at the output of the inverter.