Abstract
We present a theoretical investigation of electronic transport in van der Waals nanodevices based on MoS2/WS2 heterobilayers with various electrode configurations, including graphene-and silicene-based contacts.The influence of relative twisting between the MoS2 and WS2 layers is systematically analyzed for twist angles = 0°, 3°, 6.2°, and 9.7°, corresponding to different regimes of moiré superlattice modulation.Quantum transport calculations are performed within the nonequilibrium Green's function formalism, enabling a consistent description of contact effects and voltage-dependent transmission characteristics.It is shown that in the absence of twisting, the transport properties are predominantly governed by the electrode material.The introduction of a small twist angle leads to current suppression due to localization of electronic states induced by the moiré effect, whereas larger twist angles result in enhanced conductance.The inverted silicene-MoS2/WS2-graphene configuration exhibits the highest current, which is attributed to interface metallization arising from the silicene-MoS2 contact.These results demonstrate that both the twist angle and the electrode material provide efficient means for tuning the transport properties of MoS2/WS2-based nanoelectronic devices.