Mn-Doped Quinary Ag–In–Ga–Zn–S Quantum Dots for Dual-Modal Imaging

Perizat Galiyeva, H. Rinnert, Sabine Bouguet‐Bonnet, Sébastien Leclerc, Lavinia Balan, Halima Alem, Sébastien Blanchard, Jordane Jasniewski, Ghouti Medjahdi, Bolat Uralbekov

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Raphaël Schneider

2021

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DOI 10.1021/acsomega.1c05441
Data confidence 70 medium
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Abstract

High Resolution Image Download MS PowerPoint Slide Doping of transition metals within a semiconductor quantum dot (QD) has a high impact on the optical and magnetic properties of the QD. In this study, we report the synthesis of Mn 2+ -doped Ag–In–Ga–Zn–S (Mn:AIGZS) QDs via thermolysis of a dithiocarbamate complex of Ag +, In 3+, Ga 3+, and Zn 2+ and of Mn(stearate) 2 in oleylamine. The influence of the Mn 2+ loading on the photoluminescence (PL) and magnetic properties of the dots are investigated. Mn:AIGZS QDs exhibit a diameter of ca. 2 nm, a high PL quantum yield (up to 41.3% for a 2.5% doping in Mn 2+ ), and robust photo- and colloidal stabilities. The optical properties of Mn:AIGZS QDs are preserved upon transfer into water using the glutathione tetramethylammonium ligand. At the same time, Mn:AIGZS QDs exhibit high relaxivity ( r 1 = 0.15 mM –1 s –1 and r 2 = 0.57 mM –1 s –1 at 298 K and 2.34 T), which shows their potential applicability for bimodal PL/magnetic resonance imaging (MRI) probes.