Abstract
A self-oscillating parametric optical power transducer based on microelectronic transistor structures with differential negative resistance and a primary photosensitive element based on a bipolar phototransistor is proposed, and the primary photosensitive element is also an active element of the self-oscillator itself, which significantly reduces hardware costs. Based on the consideration of physical processes in the primary photosensitive element and the self-oscillator, based on the energy conversion method, a mathematical model of a microelectronic optical device has been developed, which made it possible to obtain parametric dependences of the conversion and sensitivity functions. The main factor in changing the conversion and sensitivity functions is a change in optical power. This changes the equivalent capacitance and differential negative resistance of the oscillatory system of the microelectronic self-oscillating optical power transducer, changing the output frequency of the device. Since the optical power varies in the range from 0 μW/cm2 to 90 μW/cm2, the sensitivity of the self-oscillating optical transducer varies from 151.3 kHz/μW/cm2 to 166.5 kHz/μW/cm2 in the frequency range from 848.8 MHz to 864.2 MHz.