Abstract
In this study, radiation damage in BaFBr and BaF2 crystals irradiated with 147 MeV 84Kr ions up to fluences of (1010–1014) ions/cm2 was investigated using X-ray excited optical luminescence (XEOL) and pulsed cathodoluminescence (PCL). The effect of oxygen impurities present in the studied crystals was also considered. XEOL spectra revealed bands associated with oxygen impurities occupying halide sites, as well as luminescence bands with maxima at approximately 2.81 eV, 3.7–4 eV, and 2.3 eV. The luminescence at 2.81 eV can be attributed to the recombination of electrons released during X-ray irradiation with holes trapped at specific sites (Type I, PL). The observed highly energetic luminescence is most likely due to perturbed exciton. Such a perturbed exciton can be formed in the configuration F + Vk (Br2−) in the presence of the neighboring impurity ion O2−. Oxygen impurities play an important role in the formation mechanisms of these centers. High radiation doses lead to crystal degradation. Excitation by a high-power electron pulse induces excitonic luminescence near the oxygen impurity at 4.2 eV. A distinctive feature of the 4.2 eV emission band is its strong intensity at high temperatures. In the decay kinetics of the PCL spectra, a fast component in the nanosecond range dominates, which remains independent of fluence in BaFBr and BaF2 crystals irradiated with krypton ions.