Annealing of Oxygen-Related Frenkel Defects in Corundum Single Crystals Irradiated with Energetic Xenon Ions

Eugene A. Kotomin, Ruslan Assylbayev, Guldar Baubekova, Irina Kudryavtseva, Vladimir N. Kuzovkov, Alise Podelinska, V. Seeman, Evgeni Shablonin, Aleksandr Lushchik

2025

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DOI 10.3390/cryst15060573

Data confidence 70 medium

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Abstract

The recovery of radiation damage induced by 231-MeV xenon ions with varying fluence (from 5´1011 and 2´1014 cm-2) in a-Al2O3 (corundum) single crystals has been studied by means of isochronal thermal annealing of radiation-induced optical absorption (RIOA). The integral of elementary Gaussians (product of RIOA spectrum decomposition) has been considered as concentration measure of relevant oxygen-related Frenkel defects (neutral and charged interstitial-vacancy pairs, F-H, F+-H-). The annealing kinetics of these four ion-induced point lattice defects has been modelled in terms of diffusion-controlled bimolecular recombination reactions and compared with those earlier done for the case of corundum irradiation by fast neutrons. The changes in the parameters of interstitial (mobile component in the recombination process) annealing kinetics - activation energy E and pre-exponential factor X - in ion-irradiated crystals are considered.