Abstract
This work presents a study of the structural, optical and electrical characteristics of tin dioxide (SnO2) nanowires obtained by chemical deposition (CD) into SiO2/Si track templating (templating synthesis). Latent tracks in the SiO2 layer were created by irradiation with fast heavy ions (FHE) Xe at 200 MeV energy with fluence F = 108 cm-2 followed by etching in 4% aqueous hydrofluoric acid (HF) solution. The selected XO method is widely used for the deposition of semiconductor oxide nanowires in SiO2 nanopores. The CW method is cost-effective because it does not require any special equipment for the deposition of nanowires. To realize the deposition, a solution of metal coordination compound and reducing agent is used. To analyze the pore filling after CW process, the surface morphology of the samples was investigated using Zeiss Crossbeam 540 scanning microscope. The crystallographic structure of SnO2/SiO2/Si nanostructures with SnO2 nanopore filling was investigated by X-ray diffraction. X-ray diffraction analysis (XRD) is performed on a Rigaku SmartLab X-ray diffractometer. A SnO2-NP/SiO2/Si nanostructure with orthorhombic crystalline structure of SnO2 nanowires supplemented with metallic tin was obtained. The photoluminescence spectra were measured under excitation with 5.17 eV wavelength light using a CM2203 spectrofluorimeter. Gaussian decomposition of the photoluminescence spectra of SnO2-NP/SiO2/Si structures, showed that they have low intensity, which is mainly due to the presence of defects such as oxygen vacancies, interdomain tin or tin with damaged bonds. The electrical characterization study was carried out using a VersaStat 3 patentiostat. The WAC measurement of the nanowire obtained by chemical deposition showed that due to the presence of metallic tin, the conductivity is close to metallic.