Abstract
Scintillation crystals CsI are widely used in nuclear physics and high-energy physics experiments. This work presents the study and analysis of luminescent properties of CsI:T1 crystals induced by irradiation with 230 MeV ¹³²Xe ions up to fluences (1·10¹¹–1·10¹⁴ ions/cm²) at 295 K (DC-60 accelerator, Astana, Kazakhstan). The research was conducted using optical absorption and luminescence spectroscopy methods, as well as time-resolved optically stimulated luminescence. The surface was studied using atomic force microscopy. A decrease in the intensity of the scintillation emission band at 553 nm and its light yield with increasing fluence was established. The conversion efficiency of the studied samples does not depend on fluence. Therefore, radiation damage does not affect the conversion efficiency of the CsI:Tl crystal. Track formation does not reduce the conversion efficiency of the CsI:Tl crystal but participates in the scintillation process through energy reabsorption from Tl⁺ centers, leading to light yield degradation.