Abstract
Introduction. Borates of rare earth elements attract attention due to their unique physical properties due to the peculiarities of their electronic structure and crystal lattice. Ytterbium orthoborates are of great practical importance in the field of infrared luminescence. The aim of the work. Investigation of the structure, phase composition and luminescent properties of GaBO3-based solid solutions doped with ytterbium ions. Methodology. Ga1-xYbxBO3 (x = 0, 0.005, 0.01, 0.02, 0.03, 0.05, 0.06 and 1) were obtained by solid-phase synthesis. Results and discussions. SEM EDS analysis showed that 1 mol.% Yb dissolves in GaBO3 at a temperature of 700°C and 2 mol.% Yb at temperatures of at 800 and 900°C. The results of diffusion experiments indicate that the maximum is 2 mol.% of Yb ions can be dissolved in gallium borate. These data are consistent with the results of X-ray phase analysis, showing that the ytterbium content is over 2 mol.%, significant impurities and signs of incomplete synthesis are observed. Conclusion. The Ga0.995Yb0.005BO3 and Ga0.99Yb0.01BO3 compounds exhibit stable luminescent properties with broad peaks at 919 nm and 970 nm. These results highlight the potential of the materials for applications in optoelectronics and photonics.