COMPUTER SIMULATION OF NANO-DIMENSIONAL EDUCATION STRUCTURES ON THE SURFACE OF A MONOCRYSTAL AT THE SLIDE ION BOMBING

Farid F. Umarov, A. A. Djurakhalov, Kanat Mukashevich Mukashev

2018

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DOI 10.52676/1729-7885-2018-1-10-19
Data confidence 70 medium
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Abstract

This work deals with the computer simulation of low- and medium energy (E0=0.5÷10 keV) N+, Ne+, Ar+, Kr+, Be+ и Se+ions sliding collisions on the surface of a Cu(100), Ag(110), Si(001), SiC(001) and GaAs(001) solids, and of the accompanying effects, namely, scattering, sputtering and surface implantation. It has been shown that under these conditions the inelastic energy losses become predominant over the elastic ones. The anomalous energy losses observed experimentally at the grazing ion scattering by the single crystal surface were explained. It has been shown that from the correlation of the experimental and calculated energy distributions of the scattered particles, one may determine a spatial extension of the isolated atomic steps on the single crystal surface damaged by the ion bombardment. Results obtained can be also used to study short-range order in alloys undergoing ordering. Dissociative and non-dissociative desorption of adsorbed molecules were simulated. It was shown that at grazing ion bombardment the intensive nondissociative desorption of adsorbed molecules is possible. A preferential emission of Cu atoms in the case of Cu3Au (001) surface sputtering is observed. It was shown that in the case of grazing ion bombardment the layer-by-layer sputtering is possible and its optimum are observed within the small angle range of the glancing angles near the threshold sputtering angle. The obtained results allow to select the optimum conditions for obtaining implanted depth distributions with demanded shape in narrow near-surface region (5–10 atomic layers) of crystals. The highly sensitive layer-by-layer analysis method was proposed on the basis of layer-by-layer sputtering mechanism.