Аннотация
This study comprehensively details the successful synthesis of a β-Ga2O3/por-GaAs/mono-GaAs heterostructure designed for portable solar cells. Employing a combination of electrochemical etching and high-temperature oxygen annealing, we engineered a heterostructure that exhibits both crystalline and amorphous phases. XRD, SEM, and Raman spectroscopy analyses confirmed the formation of crystalline β-Ga2O3 and GaAs, with the porosity in the GaAs layer enhancing light absorption and charge collection. The potential of the heterostructure to improve photovoltaic performance is attributed to the inherent stability of Ga2O3 and the increased surface area provided by the porous GaAs.