Аннотация
The paper deals with the fundamentals of the theory of photoreactive effect in bipolar and field-effect transistor structures. Photoreactive properties of semiconductor devices are widely used in a variety of radio electronics devices. Therefore, the study of these phenomena in bipolar transistor structures with negative resistance, allows us to create new sensory devices, which have better parameters than existing ones. The method of construction of radiomeasuring microelectronic transducers is offered on the base of photoreactive effect in sensing bipolar and field transistor structures, that has established premises for embodying transducers of optical radiation with a frequency output signal.