Аннотация
This article presents a study of porous gallium phosphode (GaP) utilizing photoluminescence (PL) and Raman spectroscopy, followed by its synthesis by electrochemical etching. The investigation identifies a blue shift in the PL peak, indicative of quantum confinement phenomena, and spectral confirmation of structural integrity through Raman analysis. Deconvolution of the PL emission into Gaussian components further demarcates a complex defect structure. These results contribute significantly to the discussion on the impact of nanostructuring on semiconductor properties, providing a pathway to the refined application of GaP in optoelectronic device engineering.