Аннотация
The study of the structural, electronic and optical properties of semiconductor heterostructures, as well as the influence of synthesis parameters on them, is of undoubted scientific interest and is an urgent scientific task. A separate complex task is the development of the design and creation of light-emitting devices based on semiconductor compounds using the effect of lattice constant mismatch. The main purpose of this work is to study the properties of nanostructures based on semiconductor layers p-GaP/por-GaP/SnO2 obtained using the chemical deposition method and the creation of light emitting diodes. To study the obtained heterostructures, the methods of high-resolution X-ray diffractometry, photoluminescence, electroluminescence, Raman scattering, scanning electron microscopy, and transmission electron microscopy were used. In addition, the current-voltage characteristics of light-emitting diodes were obtained, and the mobility and concentration of charge carriers in the GaP layers were determined. The TEM results showed that the microstructure of porous GaP films has a complex spatial structure, but the local crystallographic orientation is retained and corresponds to the original substrate. In the Raman spectrum, the effects of a narrowing of the half-width of the peak of LO vibrations with a simultaneous shift to the low-frequency region were found, which can be satisfactorily explained by a change in the plasmon-phonon interaction as a result of a decrease in the carrier concentration. Porous GaP is indirect-gap and has a band structure similar to silicon, which makes it possible to use a general approach in interpreting the intense photoluminescence characteristic of porous semiconductors. It has been found that porous GaP layers are more stable and less affected by the environment than porous silicon. LED based on p-GaP/por-GaP/SnO2 semiconductor layers demonstrates electroluminescence at a wavelength of 650 nm at room temperature.