Аннотация
We report the growth of$\mathbf{Al_{x}Ga_{1\text{-}x}As}$layers on gallium arsenide. First, GaAs was electrochemically etched in a hydrochloric acid solution to form a porous layer. 'Desert Rose Stone’-like nanocrystallites$\mathbf{Al_{x}Ga_{1\text{-}x}As}$of cubic syngony, consisting of$\mathbf{Al}_{0.71}\mathbf{Ga}_{0.29}\mathbf{As}$, AlAs, and GaAs, were grown on the surface of porous gallium arsenide by electrochemical deposition. The ability to grow 3D nanostructures on gallium arsenide with a low interfacial density has a major potential impact on the complex semiconductor industry for solar power.