Аннотация
Abstract Formation of semiconductor nanostructures on the surface of single crystalline silicon and germanium wafers by spark discharge plasma in air was investigated. The prepared nanostructures were analyzed by means of the scanning and transmission electron microscopy and optical spectroscopy of the photoluminescence and Raman scattering. The formed nanostructures exhibit a fractal-like morphology with interconnected nanocrystals of 2-200 nm sizes that is explained by repeated processes of spark ablation and subsequent condensation. While the size and morphology of the nanostructure depend on power sources of the spark discharge, short interaction times of spark discharge plasma and target determine a relatively low efficiency of the chemical oxidation of germanium and silicon, as well as low ionic temperatures of the plasma.