Аннотация
The effect of SAW on the electrical properties of the few-layer (2-3 layers) graphene is studied.Under the influence of SAW the appearence of acoustoelectric current I AEC in graphene is observed.The sign and magnitude of the induced I AEC in graphene conditioned by magnitude and direction of the electromagnetic fields induced by SAW and an external electric field.When the direction of SAW and V bias is the same I AEC amplified, when at the opposite direction -I AEC are reduced in result of the interaction of these fields with each other.As a result of the measurement of the induced acoustoelectric (I AEC ) current in graphene under the influence of a surface acoustic wave (SAW) the fluctuation nature of acoustoelectric current in the area of electrical neutrality is established at low voltages of an external bias (V bias ) applied on a graphene.The fluctuation character of the I AEC is manifested in all cases of measurements depending on the action of SAW and V bias near the point of electrical neutrality.Chaotic fluctuation potential of graphene in the area of electrical neutrality is enhanced by the action of SAW that allows observing it in real conditions of the experiment at room temperature in air.The magnitude of I AEC depends on the power of SAW, while there is a parabolic dependence of the induced I AEC on the amplification current of SAW power (I SAW ).The parabolic dependence of I AEC on I SAW explained by specific relaxation of acoustic phonons of the piezocrystallical substrate, which is dominant in the process of electronphonon scattering in graphene and acoustoelectric current induction in it.For large magnitudes of V bias strict linear dependence of the I AEC on V bias is observed.Large V bias effectively suppress the appearance of the fluctuation potential of electrons and holes.The ability to control the magnitude and direction of I AEC induced in graphene by SAW is of practical importance.