Аннотация
In the plasma state, a polar semiconductor gallium arsenide (GaAs) is deposited on a nonpolar silicon (Si) matrix in the <111> direction. Further qualitative and quantitative analyzes were carried out with the resulting GaAs/Si structure on a plasma‐beam device. We have chosen the optimal characteristics of this pulsed method for the deposition of GaAs from a plasma onto silicon (Si) created by a powerful ion beam. The optimal modes of the effect of temperature, electric field, and interval of pulse action on GaAs/Si quantum‐well heteronanostructures were considered. In the implementation of application of this structure in applied works related to opto‐ and nanoelectronics, active elements of solar cells require defect‐free compositions with ideal geometric parameters. Based on these experiments, the optimal mode of plasma influence on the formation of nanoclusters on the surface of the irradiated sample was chosen. SEM, EDS, and X‐ray diffraction analysis methods were used to determine such parameters as the structure, microhardness, phase and elemental composition of the irradiated Si silicon surface, as well as the penetration depth of GaAs deposited on a single‐crystal matrix. This work presents an experimental implementation of preparation of a gallium arsenide nanolayer and an applied theoretical analysis of the GaAs/Si heteronanostructure. We deposited gallium arsenide compounds from the plasma state on the surface of a silica crystal and studied the resulting structure by physicochemical methods.