Аннотация
Due to advancements in memory technology, nanostructured semiconductor-based memristors are attracting increasing attention. This article presents the results of a study on memristors based on modified porous structures made from silicon. The memristive properties of nanostructured porous silicon (por-Si) and metal-oxide layers were investigated. The memristors based on por-Si were fabricated using electrochemical etching. The study shows that after 3 minutes, the por-Si film exhibited reversible properties, indicating that memristive behavior was observed in the porous silicon nanofilms. Metal-oxide semiconductor, such as CuO, was deposited on the por-Si surface using magnetron sputtering. The morphology of the por-Si and heterostructure was analyzed using scanning electron microscopy. The influence of light illumination on the memristor properties of films was also observed, with an increase in the hysteresis area dependent on the illumination process.