Аннотация
Light-emitting diodes utilizing halide perovskites have experienced rapid advancements in recent years, demonstrating notable external quantum efficiencies. Despite these strides, the practical implementation of such devices remains constrained. In this contribution, we are dedicated to developing perovskite light-emitting diodes with a back-contact architecture using the MAPbBr3 active layer and SnO2 and Ni/NiOx back electrodes. The quantum efficiency of the fabricated devices stands at 0.015%. The operational voltage of the light-emitting diodes is characterized by its pronounced low values, attaining a maximum luminance of 70 cd/m2 at a mere 3.2 V. These results demonstrate the considerable promise of the developed back-contact perovskite light-emitting diodes for prospective applications in advanced display technologies and light communication systems.