Аннотация
Increase in image resolution require the abilityof image sensors to pack an increased number of circuitcomponents in a given area. On the the other hand a high speedprocessing of signals from the sensors require the ability of pixelto carry out pixel parallel operations. In the paper, we proposea modified 3T and 4T CMOS wide dynamic range pixels, which we refer as 2T-M and 3T-M configurations, comprising ofMOSFETS and memristors. The low leakage currents and lowarea of memristors helps to achieve the objective of reducingthe area, while the possibility to create arrays of memristorsand MOSFETs across different layers within the chip, ensurethe possibility to scale the circuit architecture.