Аннотация
The behavior of self-interstitials in silicon which was irradiated with light ions (protons and α-particles) and electrons was explored by monitoring known impurity interstitial centers (Ci, Ali, (Si–O)i) with deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). A low mobility of the self-interstitial under conditions of low-temperature (≈︂80 K) proton or α-particle irradiation was observed and a self-interstitial-related defect was detected. The reduced mobility results from the lower injection level under proton or α-particle irradiation conditions, and self-interstitials are stable in intrinsic and p-type Si up to room temperature at the equilibrium state.