Аннотация
At present, the study of complex electrophysical characteristics of semiconductor nanofilaments andnanofilms is of interest: the presence of non-monotonic oscillating characteristics with memory, areas ofnegative differential resistance. The aim of this work is to experimentally study both the volt-ampere andvolt-farad characteristics of semiconductor nanoporous structures. The studied samples of porous siliconwith the p-n structure were obtained by electrochemical etching. Single-crystal silicon with a p – n+junction was used as the initial substrate. The NI EL VIS II+ educational platform and the Agilent E4980Ainstrument were used to study the electrophysical characteristics. To measure the dependence of current onvoltage, as well as capacitance on voltage, Inga contacts with a thickness of 370 nm each were applied tonanoporous films. Thus, in this work, the phenomena of current switching, hysteresis behavior of current,and capacitance of porous silicon nanofilms are experimentally studied. It was found that these effects areamplified by a factor of 3-4 when the films are irradiated with an infrared laser. The results of this workcan be used in the field of nanotechnology to improve memory and sensory elements. The establishedexperimental facts can serve as a basis for constructing physical theories.