Аннотация
Features of diagnostics of semiconductor sensory elements and structures (SES) and measuring modules (MM) of measuring transducers (MT) of pressure and temperature are considered. It is noted that there are problems associated with the interaction of pressure and temperature channels between each other. High diagnostic informativity of the current-voltage characteristics (CVC) of p-n transitions of piezoresister structures: direct and reverse branches and their derivatives is shown. The course and dynamics of the CVC make it possible to reveal various defects, including those that are not manifested by other known methods. The diagnostics of MTs are described using test structures and elements that are formed both on the surface or in the body of the sensitive element and on the working silicon plates. A technique is proposed for end-to-end monitoring and diagnostics of MT manufactured using unified SES and MT. This made it possible to reduce the labor-intensiveness of manufacturing the MT and, accordingly, reduce the cost of sensors.