Аннотация
We reported the formation of nanosized InAs crystallites in silicon wafers by means of As (245 keV, 4.1•10 16 cm -2 ) and In (350 keV, 3.7•10 16 cm -2 ) implantation.The implantation was carried out at 25 and 500 • C. In order to verify the effect of getter on precipitates growth an additional procedure was carried out for the samples implanted with As and In species at the room temperature.This procedure included the implantation of H + 2 ions with the energy of 100 keV at 1.2•10 16 cm -2 .Afterwards, the samples were annealed at 900 • C for 60 min in inert ambient.In order to characterize the implanted layers, Rutherford backscattering spectrometry in combination with the channelling (RBS / C) and transmission electron microscopy (TEM) techniques were used.TEM has revealed InAs nanocrystals in implanted samples after the annealing.It has been shown that average size and size distribution of InAs clusters depend on implantation temperature and annealing duration.Significant diffusional redistribution of implanted species has been revealed after "hot" implantation and post-implantation annealing.We have suggested that it is caused by non-equilibrium diffusion.The radiation-enhanced diffusivities at "hot" implantation have been determined for the abovementioned experimental conditions.