Аннотация
Abstract A universal device for experimentally studying the migration of microscopic structure defects and the features of dielectric relaxation is proposed. it allows using the thermo stimulated depolarization method, in combination with the measurement of the tangent of the angle of dielectric losses and the thermo stimulated polarization current, to perform dielectric spectroscopy of hydrogen-bonded crystals and perform analysis of the properties and parameters of structure defects. A smaller (in comparison with the existing installation) additional compact device for measuring small values of electrical capacitance and the tangent of the angle of dielectric losses, including an electrometer B7-30, was designed, measurement was carried out using a q-factor meter VM 560. When measuringtgδ > 0.1, the VM-507 device was used. An experimental methodology is proposed that allows, in combination with the method of minimizing the comparison function (MFC - method), with a high degree of accuracy, to calculate the molecular characteristics of structural defects in composite materials based on semiconductors and dielectrics used in the electrical and optical fiber industry, electric power and insulation technology.