Аннотация
Abstract Organic field‐effect transistors are widely recognized as key enabling components for low‐cost, lightweight, and flexible electronic systems. Despite substantial research progress, a critical barrier to their commercialization remains the fragmented understanding between materials chemistry, device physics, and manufacturing. In contrast to reviews that focus on isolated aspects, this research provides a distinctive integrative perspective, deliberately linking fundamental material properties with device‐level performance and operational stability. This approach is essential for addressing persistent issues such as environmental instability, significant contact resistance, and performance non‐uniformity. We highlight recent progress in both p‐type and n‐type semiconductors, novel device architectures, and the underlying mechanisms of contact resistance. Particular emphasis is placed on interface engineering and structural optimization to mitigate parasitic losses and enhance operational stability. By bridging molecular design with contact engineering, this review outlines clear pathways toward reliable, high‐performance OFET for next‐generation flexible electronics.