Аннотация
In this work, a method for synthesizing antimony selenide (Sb2Se3) thin films is presented, along with investigations of their morphology, structural, and optical properties. The synthesis method consisted of two stages. In the first stage, an antimony precursor film was deposited by magnetron sputtering. In the second stage, selenization was carried out in selenium vapor at a temperature of 400 °C for 10 minutes. The morphology of the obtained films was examined using scanning electron microscopy. The morphological analysis showed that the film has a polycrystalline structure with good adhesion to the silicon substrate.The elemental composition of the film was analyzed by energy-dispersive X-ray spectroscopy (EDS). According to the EDS results, the atomic percentage ratio of Se/Sb was 1.59, indicating that the obtained film is close to stoichiometric composition. The EDS data were confirmed by phase composition analysis performed using X-ray diffraction. It was found that the film crystallizes in the orthorhombic structure (Pnma). No secondary phases were detected in the structure. To investigate the optoelectronic properties of the film, a reflectance spectrum was recorded. From the reflectance spectrum, the band gap energy was determined using the Tauc method and found to be 1.69 eV, which is optimal for applications in optoelectronic devices.