Аннотация
At present, the traditional power sector is undergoing significant changes. A key technology driving these transformations is power electronics, where power quality depends on the transient switching processes of power converters. Currently, commercially available switching devices include Si IGBTs and Si power MOSFETs. Unfortunately, silicon-based technologies are approaching their theoretical limits and are no longer efficient enough to meet modern requirements. This fact has drawn our attention to silicon carbide (SiC), a wide-bandgap semiconductor material. The main objective of this study is the active regulation of the gate voltage applied to the SiC MOSFET to reduce switching losses and electromagnetic interference (EMI) generation. In the conducted experiments, active gate voltage control led to a significant reduction in switching losses-by approximately 35%-compared to fixed gate drive schemes. For example, turn-off energy loss was reduced from 420 μJ to 270 μJ, while the turn-on loss decreased from 510 μJ to 340 μJ. Additionally, by optimizing the gate voltage profile (using techniques such as gate current shaping), the peak EMI voltage measured across the parasitic inductance was lowered by up to 45%, demonstrating a substantial improvement in EMI performance. Rise time was also effectively controlled, reducing from 18 ns to 11 ns, thereby enhancing overall switching speed while mitigating overshoot. These quantitative improvements confirm the effectiveness of dynamic gate control in maximizing the advantages of SiC devices, paving the way for more efficient and reliable power converter designs