Аннотация
Indium gallium zinc oxide (IGZO) is a potential photoelectrode material for water splitting with solar power due to its tunable bandgap, high mobility of electrons, and scalable thin-film compatibility.In the present research, IGZO thin films were sputtered on fluorine-doped tin oxide (FTO) substrates by RF magnetron sputtering and subsequent thermal annealing at temperatures between 400 and 550 °C.The films' structural, morphological, and photoelectrochemical characteristics were evaluated.PEC in three-electrode setup revealed that annealing significantly influences photocurrent density and stability, with the best performance demonstrated for the 500-550 °C-treated film.Scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis revealed grain growth, enhanced crystallinity, and reduced defect density following thermal treatment, as expected for increased charge transport and reduced recombination.Cross-sectional SEM revealed uniform growth of the film with ~196 nm thickness.The results place IGZO firmly on the map as a high-potential photoanode material, with interface engineering, defect control, and heterojunction methodologies likely to further boost efficiency.The results demonstrate the future promise of IGZO in driving scalable, stable, and efficient solar hydrogen evolution systems.