Аннотация
The degradation of the electronic properties of semiconductor materials and electronic devices under neutron irradiation is a critical issue for the development of electronic systems intended for use in nuclear and thermonuclear energy facilities. This study presents a methodology for real-time measurement of the electrical parameters of semiconductor structures during neutron irradiation in a high-flux reactor environment. A specially designed irradiation fixture with an electrical measurement system was developed and implemented at the WWR-K research reactor. The system enables simultaneous measurement of electrical conductivity and the Hall effect, with automatic temperature control and remote data acquisition. The sealed fixture, equipped with radiation-resistant wiring and a temperature control, allows for continuous measurement of remote material properties at neutron fluences exceeding 1018 cm−2, eliminating the limitations associated with post-irradiation handling of radioactive samples. The technique was successfully applied to the two different InGaAs-based heterostructures, revealing distinct mechanisms of radiation-induced modification: degradation of mobility and carrier concentration in the InGaAs quantum well structure on GaAs substrate, and transmutation-induced doping effects in the heterostructure on InP substrate. The developed methodology provides a reliable platform for evaluating radiation resistance and optimizing materials for magnetic sensors and electronic components designed for high-radiation environments.