Аннотация
In this work we study the rectifying behavior of organic electrochemical transistors (OECTs). Despite OECTdevices are symmetric devices they display asymmetrical output IV curves at negative and positive drain biassweep. Here, we show that the asymmetry is introduced by the electrical connections with the drain (orsource) potential affecting the distribution of ion density in the channel that tunes the doping/de-doping stateof the channel and consequently modulates its conductivity. This effect is profoundly noticeable on accumulationmode OECT based on Poly(3-hexylthiophene) (P3HT) channel layer. We demonstrate that accumulationmode OECT can operate either as a current rectifier with the positive rectification polarity or as a currentrectifier with the negative rectification polarity by simple changing connection of the gate electrode either directlyto the source or to the drain, respectively. The underline mechanism of the current rectification andhystereses in IV curves of OECT based rectifier are discussed. At the forward Vds sweep, the doping of thedrain region occurs due to the injection of anions driven by positive ΔV. During the forward scan, the channelbegins in a highly conductive state, resulting in higher forward current. In contrast, during the backward scan,the channel is more resistive, leading to lower current. Besides the capacitive hysteresis caused by ion inertia,the intrinsic capacitive hysteresis associated with electronic charging/discharging and polarization due to lateralion movement also contributes to the observed hysteresis.