Аңдатпа
Wafers of crystalline silicon (c-Si) and compound semiconductors (GaP, GaAs) were nanostructured by using the electrochemical etching in specially designed cells with two or more electrodes spaced at 100–500 μm distances, which allowed keeping the electrolyte due to capillary forces. Investigations by means of atomic force microscopy and optical spectroscopy revealed nanoporous and nanocrystalline structure of the prepared samples. The employed capillary-force-assisted method is promising for preparation of thin layers of nanostructured semiconductors with desired optical properties having advantages of cost saving, quickness and flexibility in the electrical contact arrangements versus conventional electrochemical etching methods.