Аңдатпа
(Ga0.4In0.6)2Se3 thin films were deposited by thermal evaporation technique. Refractive index and extinction coefficient dispersions were obtained from the spectral ellipsometry measurements. The dispersion of refractive index is described in the framework of Wemple-DiDomenico model. The energy pseudogap and Urbach energy were determined from the optical absorption spectrum of (Ga0.4In0.6)2Se3 thin film. Optical parameters of (Ga0.4In0.6)2Se3 thin film and single crystal were compared.