Аңдатпа
The structure and physical properties of porous silicon obtained by electrochemical etching of monocrystalline silicon with n-type conductivity in a mixture of hydrofluoric acid and ethyl alcohol were investigated. Experimental layers were formed by varying the etching parameters. Samples were studied using the methods of atomic force microscopy (AFM),scanning electron microscopy (SEM), Raman spectroscopy (RS) and photoluminescence spectrometry (PL). It was found that the PL intensity increased with increasing etching time. It was demonstrated that by varying of technological parameters and conditions of the etching process we can control the size of nanocrystals and manufacture nanostructuresof porous silicon film with improved properties.