Аңдатпа
Thin films of tin dioxide were obtained from five-water tin tetrachloride by dissolution in 97% ethanol. The concentration of tin ions in the film-forming solution was 0.12 mol/l, 0.16 mol/l, 0.2 mol/l. The film-forming solution SnCl4/EtOH was applied to the surface of glass substrates by a modified dipping method. Substrates were dried in the air and then annealed at 400°C. Just 4 layers were applied. Hydrogen plasma treatment was carried out at a pressure of 6.5 Pa, power of 20 Watts, oscillation frequency generated by the equipment 27.12 MHz ±0.6%. The decrease of transparency, within the limits of accuracy of measurement of the films obtained from film-forming system with a concentration of tin ions of 0.12 mol/l and 0.2 mol/l were observed. The transparency of the films obtained from film-forming systems with tin ion concentration 0.16 mol/l decreased by 3%. The resistance of the films decreased by 1.5 times. X-ray diffraction analysis showed an increase in the intensity of diffraction peaks from the planes of SnO2 crystallites. An important technical result was obtained: a decrease in the resistance of SnO2 thin films without a significant decrease in transparency, using a film-forming solution with a tin ion concentration of 0.12 mol/l and 0.2 mol/l after treatment for 3 minutes in hydrogen plasma.