Аңдатпа
In porous-silicon-based multilayered structures that exhibit the properties of one-dimensional photonic crystals, an increase in the photoluminescence and Raman scattering intensities is observed upon optical excitation at the wavelength 1.064 μm. When the excitation wavelength falls within the edge of the photonic band gap of the structures, a multiple increase (by a factor larger than 400) in the efficiency of Raman scattering is detected. The effect is attributed to partial localization of excitation light and, correspondingly, to the much longer time of interaction of light with the material in the structures.