Аңдатпа
Abstract Nano-crystalline and amorphous films of graphitized carbon were deposited by electron-beam evaporation of bulk graphite. Structural properties and the size of graphite nanoclusters ( L ≈ 1.2–5 nm) in the films were determined from the analysis of their Raman spectra. Electrical properties of the bulk nano-crystalline graphite reference sample and the deposited graphitic carbon films were measured by means of the Hall effect technique within the temperature range from 290 to 420 K. The electrical conductivity σ and Hall mobility μ H of all samples exhibited exponential temperature dependences, indicating on the non-metallic behavior. Electrical properties of the amorphous graphitic carbon thin films, deposited at low substrate temperatures (620 and 750 K) were analyzed in the scope of the hopping charge transport mechanism via localized states. We have shown that the charge transport in the bulk and thin film (920 K) nano-crystalline graphite samples is carried out via the tunneling and thermionic emission over potential barriers at the grain boundaries.This paper contributes towards better understanding of coupling between structural and electrical properties of graphitic carbon thin films.